Minsk Research Institute of Radiomaterials

https://mniirm.by/  
220024 Minsk, Lieutenant Kizhevatov str. 86-2

Manufacture and supply of GaAs FET power amplifiers «UK» 0,75-12 GHz

COUNTRY OF ORIGIN

IDENTIFIER

BO7575

PUBLISHED

2024-02-20

LAST UPDATE

2024-02-20

DEADLINE

Linked profile in other language
Responsible
Natalia Mikhaseva
+ 375 33 333 9522
mniirm_m@mail.ru
Summary
Minsk Research Institute of Radiomaterials of the National Academy of Sciences of Belarus offers consumers GaAs FET power amplifiers «UK 2 6106» (0,75..2 GHz), «UK 4 6106» (2..4 GHz), «UK 8 6106» (4..8 GHz), «UK 12 6106» (8..12 GHz) under a manufacturing agreement and is looking for partners interested in a distribution services agreement.
Description
OJSC "Minsk Research Institute of Radiomaterials" of the National Academy of Sciences of Belarus manufactures GaAs FET power amplifiers «UK» designed to amplify small electric microwave signals in the frequency range of 0.75-12 GHz in the input circuits of receiving devices and amplification circuits of heterodyne signals of frequency synthesizers.

Amplifiers are made on monolithic technology on the structures of gallium arsenide. The active element of the amplifier is a field-effect transistor with a Schottky gate, the length of which is 0.5 microns. Grounding points displayed on the reverse side of the sub­strate through the holes in gallium arsenide, which significantly reduce the parasitic inductance and a wide bandwidth at high gain.

Amplifiers have the following distinctive features:
* integral performance;
* microstrip design;
* wide frequency range;
* low noises level.

Technical specifications:
Parameter
UK 2
UK 4
UK 8
UK 12
Frequency range, GHz
0,75..2
2..4
4..8
8..12
Gain, dB, over
17±1
17±1
17±1,5
17±1,5
Noise figure, dB, max
3,0
3,5
4,5
4,5
Supply voltage, V
6..9
6..9
6..9
6..9
Current consumption, mA, max
45
45
45
40
Temperature range, °С -60..+70 -60..+70 -60..+70 -60..+70
Output power(for 1dB compression), dBm
10
10
10
10

Areas of use:
* radar;
* radiomonitoring;
* means RES;
* radio-measuring equipment.

OJSC "Minsk Research Institute of Radiomaterials" offers partners:
* GaAs FET power amplifiers «UK 2 6106», «UK 4 6106», «UK 8 6106», «UK 12 6106» under a manufacturing agreement;
* GaAs FET power amplifiers «UK 2 6106», «UK 4 6106», «UK 8 6106», «UK 12 6106» under a distribution services agreement.

Link to the product on Minsk Research Institute of Radiomaterials site.
Advantages and Innovations
GaAs FET power amplifiers «UK» is similar to products:
NDAC by «NEDI Technology» (China);
SPA2A1002 by «Skylight» (China).
Stage of development
Already on the market
Funding source
State budged
Internal
IPR status
Exclusive rights
Secret know-how
Sector group
Aeronautics, Space and Dual-Use Technologies
ICT Industry & Services
Retail

Organization information

Type
R&D institution
Year established
1982
NACE keywords
C.27.90 - Manufacture of other electrical equipment
C.32.99 - Other manufacturing n.e.c.
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
Turnover (in EUR)
10-20M
Already engaged in transnational cooperation
Yes
Additional comments
The specialization of the institute includes the following main areas:
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.

The research and production base of the institute includes dedicated equipment which allows to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.

The Institute has a licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.

As part of the specialization, the development of technologies, components and devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
Languages spoken
English
Russian

Information about partnership

Type of partnership considered
Distribution services agreement
Manufacturing agreement
Type and role of partner sought
Consumers interested in purchasing GaAs FET power amplifiers «UK 2 6106», «UK 4 6106», «UK 8 6106», «UK 12 6106» under a manufacturing agreement.

Partners interested in purchasing GaAs FET power amplifiers «UK 2 6106», «UK 4 6106», «UK 8 6106», «UK 12 6106» under a distribution service agreement.
Type and size of partner sought
> 500
251-500
SME 51-250
SME 11-50
SME <= 10
Sole proprietor

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