Application area:
Obtainedceramics based on aluminum nitride can be used as substrates and enclosures hybrid integrated circuits and other electronic devices, equipment, as well as targets for forming thin films, and a thin film structure used in optoelectronics. The method for producing eliminates any binders andadditives, activating the sintering
process. The method is protected by patents of Russia and Belarus. The material has a
trademark "Alnit".

Specifications:
Density: 99..100% of theoretical density
Thermal conductivity: 135..185 W/(m·K)
Electrical resistivity: 1011..10130m·cm
Microhardness: 16,5..18 GPa
Roughness: ≤ 0,6 μm
Dissipation factor, tgδ: 0,0005..0,01
Dielectric constant, ε: 8,5..12
Diameter: 10..26 mm, thickness: 0,5..5 mm.