Minsk Research Institute of Radiomaterials

https://mniirm.by/  
220024 Minsk, Lieutenant Kizhevatov str. 86-2

Manufacture and sale of gallium arsenide (GaAs) wafers

COUNTRY OF ORIGIN

Belarus

IDENTIFIER

BO7610

PUBLISHED

2024-06-27

LAST UPDATE

2024-06-27

DEADLINE

Linked profile in other language
Responsible
Natalia Mikhaseva
+ 375 33 333 9522
mniirm_m@mail.ru
Summary
Minsk Research Institute of Radiomaterials of the National Academy of Sciences of Belarus offers consumers gallium arsenide (GaAs) wafers under a manufacturing agreement.
Description
OJSC "Minsk Research Institute of Radiomaterials" of the National Academy of Sciences of Belarus manufactures gallium arsenide wafers designed to convert an optical signal into an electrical signal at a speed of up to 2.5 Gbit/s ( TU RB 100428401.088-200).

Gallium arsenide wafers have certain advantages over silicon ones:
* high electrical resistivity, as well as a high value of the dielectric constant;
* can operate at higher power levels because they have higher breakdown voltages;
* have a high mobility and saturation rate for electrons;
* provide reliable isolation between different devices;
* generate less noise when operating at high frequencies;
* less susceptible to temperature changes.

Technical specifications:
Method of growing Czochralski(LEC)
Diameter, mm50.8±0.3 and 76.2±0.3
Resistivity, Ohms⋅cm> 1∙107
Mobility, cm2/V∙s≥ 4500
Dislocation density, cm-2≤ 1∙105
Material typesemi-insulating
Alloying impuritiesunalloyed
Crystallographic orientationon request
Thicknesson request
Orientation of sliceson request
Processing of the front sidepolished,prepared for epitaxy
Reverse side processingon request
TTV, microns< 7
Bow, microns< 10
Packagingindividual container, in an inert atmosphere.

The manufacturing time and cost are determined during the preparation of a specific order.

Areas of use:
* manufacturing of microwave integrated circuits;
* discrete and matrix photodetectors;
* LEDs, photocathodes;
* ionizing radiation detectors;
* optical products for input-output;
* semiconductor lasers;
* satellite solar panels;
* focusing and modulation of IR-radiation, etc.

Minsk Research Institute of Radiomaterials offers partners gallium arsenide wafers under a manufacturing agreement.

Link to the product on Minsk Research Institute of Radiomaterials site (in Belarusian).
Advantages and Innovations
Import substitution for gallium arsenide wafers produced by:
-«PROTECH» (Russian Federation);
-«Wafer World Inc.» (USA);
-«American Elements» (USA);
-«Xiamen Powerway Advanced Material Co., Ltd.» (China);
-«Freiberger Compound Materials Inc.» (Germany);
-«DOWA Electronics Materials Co., Ltd.» (Japan).
Stage of development
Already on the market
Funding source
State budged
Internal
IPR status
Exclusive rights
Secret know-how
Sector group
Aeronautics, Space and Dual-Use Technologies
Nano and micro technologies

Client information

Type
R&D institution
Year established
1982
NACE keywords
C.27.90 - Manufacture of other electrical equipment
C.32.99 - Other manufacturing n.e.c.
M.72.19 - Other research and experimental development on natural sciences and engineering
M.74.90 - Other professional, scientific and technical activities n.e.c.
Turnover (in EUR)
10-20M
Already engaged in transnational cooperation
Yes
Additional comments
The specialization of the institute includes the following main areas:
* development and production of the element base and functional units of microwave technology (solid-state microwave monolithic integrated circuits - low-noise amplifiers and power amplifiers, protective devices, switches, attenuators, frequency converters; microwave modules, etc.);
* development and production of optoelectronic components and modules based on them (photodetectors, light emitting diodes, semiconductor lasers, receiving and transmitting optical modules);
* production of materials for semiconductor production - gallium arsenide substrates of the "epi-ready" standard;
* development of sensor technology, modules and systems (sensors for inclination, pressure, acceleration, electronic compass, etc.);
* development and production of medical equipment.

The research and production base of the institute includes dedicated equipment which allows to develop and perform a full cycle of technological operations for the manufacture of microwaves, optoelectronic components, sensors of physical quantities based on microelectromechanical systems, equipment for the manufacture of medical products - Glucosen sensors etc. In particular, the equipment allows cutting semiconductor ingots of A3B5 compounds (GaAs, InP, GaN, etc.), grinding and polishing wafers, epitaxial growth, thermal diffusion and implantation of dopants, microcircuit packaging, control of their parameters, etc.

The Institute has a licensed software for electrodynamic calculations, its own library of standard elements, methods for monitoring and testing microwave components in the C, S, L, X, K wavelength ranges, electronic lithography equipment with a resolution of 100 nm, which provides a modern level of design standards.

As part of the specialization, the development of technologies, components and devices for various radio-electronic systems is carried out: radar systems, fiber-optic communication lines, laser rangefinders, systems for leveling and orientation of objects, control systems, guidance and navigation, etc.
Languages spoken
English
Russian

Information about partnership

Type of partnership considered
Manufacturing agreement
Type and role of partner sought
Consumers interested in purchasing gallium arsenide wafers under a manufacturing agreement.
Type and size of partner sought
> 500
251-500
SME 51-250
SME 11-50
SME <= 10
R&D Institution
University
Sole proprietor

Attachments

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