Physical-Technical Institute

https://phti.by/  
220084 Minsk, Academician Kuprevich Str.10

The ingot cutting of mono-crystal silicon on plates and laser gettering impurity in semiconductors structures

COUNTRY OF ORIGIN

IDENTIFIER

TO3026

PUBLISHED

2020-11-25

LAST UPDATE

2020-11-26

DEADLINE

Linked profile in other language
Responsible
Alesia Kartuzava
+375 29 150 2787
market@phti.by
Description
Manufacturing of silicon plates for integrated microcircuits; removal fastdiffusing
impurity from active areas of Integrated microcircuits.
Field of application:
Microelectronics.
Developed tools:
The cutting tool and recommendations with the account crystallographic factors for
silicon plates of orientation (001) and (111)
on:
-mode of ingot cutting of monocrystal silicon on plates;
mode of laser getter I ng fast–diff using impurity.
Advantages and Innovations
-methods of cutting allow to receive more uniform distribution and considerable
decrease in depth of the broken layers to surfaces of cut off plates, to improve
geometrical parameters – to reduce a deflection and to eliminate a surface micro–wavlness;
-gettering methods of impurity allow to form gettering the high-capacity areas
excluding an exit of dispositions on a working surface of plates, to raise an exit of suitable semiconductor structures.
Stage of development
Field tested/evaluated (TRL8)
Funding source
State budged
Internal
IPR status
Secret know-how
Sector group
Aeronautics, Space and Dual-Use Technologies
Environment
Maritime Industry and Services
Materials
Nano and micro technologies

Organization information

Already engaged in transnational cooperation
Yes
Languages spoken
English
Russian

Information about partnership

Type of partnership considered
Commercial agreement with technical assistance
License agreement
Type and size of partner sought
251-500
SME <= 10
SME 11-50
SME 51-250

Attachments

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